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cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 72-mbit (2 m 36/4 m 18/1 m 72) flow-through sram with nobl? architecture cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 001-15013 rev. *h revised may 13, 2011 72-mbit (2 m 36/4 m 18/1 m 72) flow-through sram with nobl? architecture features no bus latency? (nobl?) arch itecture eliminates dead cycles between write and read cycles supports up to 133 mhz bus operations with zero wait states data transfers on every clock pin compatible and functionally equivalent to zbt? devices internally self timed output buf fer control to eliminate the need to use oe registered inputs for flow through operation byte write capability 2.5 v io supply (v ddq ) fast clock-to-output times ? 6.5 ns (for 133-mhz device) clock enable (cen ) pin to enable clock and suspend operation synchronous self timed writes asynchronous output enable (oe ) cy7c1471bv25, cy7c1473bv25 available in jedec-standard pb-free 100-pin tqfp, pb-free and non-pb-free 165-ball fbga package. CY7C1475BV25 available in pb-free and non-pb -free 209-ball fbga package. three chip enables (ce 1 , ce 2 , ce 3 ) for simple depth expansion. automatic power down feature available using zz mode or ce deselect. ieee 1149.1 jtag bound ary scan compatible burst capability - linear or interleaved burst order low standby power functional description the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 are 2.5 v, 2 m 36/4 m 18/1 m 72 synchronous flow through burst srams designed specifical ly to support unlimited true back-to-back read or write oper ations without the insertion of wait states. the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 are equipped with the advanced no bus latency (nobl) logic required to enable consecutive read or write operations with data transf erred on every clock cycle. this feature dramatically improves th e throughput of data through the sram, especially in systems t hat require frequent write-read transitions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock input is qualified by the clock enable (cen ) signal, which when deasserted suspends operation and extends the previous clock cycle. maximum access delay from the clock ri se is 6.5 ns (133-mhz device). write operations are controlled by two or four byte write select (bw x ) and a write enable (we ) input. all writes are conducted with on-chip synchronous self timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) provide easy bank selection and output tri-state control. to avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence. for best practice recommendations, refer to the cypress application note an1064, sram system guidelines. selection guide description 133 mhz 100 mhz unit maximum access time 6.5 8.5 ns maximum operating current 305 275 ma maximum cmos standby current 120 120 ma [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 2 of 33 logic block diagram ? cy7c1471bv25 (2 m 36) logic block diagram ? cy7c1473bv25 (4 m 18) c mode bw a bw b we ce1 ce2 ce3 oe read logic dqs dqp a dqp b dqp c dqp d memory array e input register bw c bw d address register write registry and data coherency control logic burst logic a0' a1' d1 d0 q1 q0 a0 a1 adv/ld ce adv/ld c clk cen write drivers d a t a s t e e r i n g s e n s e a m p s write address register a0, a1, a o u t p u t b u f f e r s e zz sleep control c mode bw a bw b we ce1 ce2 ce3 oe read logic dqs dqp a dqp b memory array e input register address register write registry and data coherency control logic burst logic a0' a1' d1 d0 q1 q0 a0 a1 adv/ld ce adv/ld c clk c en write drivers d a t a s t e e r i n g s e n s e a m p s write address register a0, a1, a o u t p u t b u f f e r s e zz sleep control [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 3 of 33 logic block diagram ? CY7C1475BV25 (1 m 72) a0, a1, a c mode ce1 ce2 ce3 oe read logic dq s dq pa dq pb dq pc dq pd dq pe dq pf dq pg dq ph d a t a s t e e r i n g o u t p u t b u f f e r s memory array e e input register 0 address register 0 write address register 1 burst logic a0' a1' d1 d0 q1 q0 a0 a1 c adv/ld adv/ld e input register 1 s e n s e a m p s o u t p u t r e g i s t e r s e clk cen write drivers bw a bw b we zz bw c bw d bw e bw f bw g bw h sleep control write address register 2 write registry and data coherency control logic [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 4 of 33 contents pin configurations ........................................................... 5 pin definitions .................................................................. 9 functional overview ...................................................... 10 single read accesses .............................................. 10 burst read accesses ................................................ 10 single write accesses ............................................... 10 burst write accesses ................................................ 11 sleep mode ............................................................... 11 interleaved burst address table (mode = floating or vdd) ............................................. 11 linear burst address table (mode = gnd) ................................................................ 11 zz mode electrical characteristics ............................... 11 truth table ...................................................................... 12 truth table for read/write ............................................ 13 truth table for read/write ............................................ 13 truth table for read/write ............................................ 13 ieee 1149.1 serial boundary sc an (jtag) ... ........... .... 14 disabling the jtag feature ...................................... 14 tap controller state diagram ....................................... 14 test access port (tap) ............................................. 14 tap controller block diagram ...................................... 14 performing a tap r eset .......... .............. .......... 14 tap registers ...................................................... 15 tap instruction set ................................................... 15 tap ac switching characteristics ............................... 17 2.5 v tap ac test conditions ....................................... 17 2.5 v tap ac output load equivalent ......................... 17 tap dc electrical characteristics and operating conditions ..................................................... 17 identification register definitions ................................ 18 scan register sizes ....................................................... 18 identification codes ....................................................... 18 boundary scan exit order (2 m 36) ........................... 19 boundary scan exit order (4 m 18) ........................... 19 boundary scan exit order (1 m 72) ........................... 20 maximum ratings ........................................................... 21 operating range ............................................................. 21 electrical characteristics ............................................... 21 capacitance .................................................................... 22 thermal resistance ........................................................ 22 switching characteristics .............................................. 23 switching waveforms .................................................... 24 ordering information ...................................................... 27 ordering code definitions ..... .................................... 27 package diagrams .......................................................... 28 acronyms ........................................................................ 31 document conventions ................................................. 31 units of measure ....................................................... 31 document history page ................................................. 32 sales, solutions, and legal information ...................... 33 worldwide sales and design s upport ......... .............. 33 products .................................................................... 33 psoc solutions ......................................................... 33 [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 5 of 33 pin configurations a a a a a1 a0 nc/288m nc/144m v ss v dd a a a a a a dqp b dq b dq b v ddq v ss dq b dq b dq b dq b v ss v ddq dq b dq b v ss nc v dd dq a dq a v ddq v ss dq a dq a dq a dq a v ss v ddq dq a dq a dqp a dqp c dq c dq c v ddq v ss dq c dq c dq c dq c v ss v ddq dq c dq c nc v dd nc v ss dq d dq d v ddq v ss dq d dq d dq d dq d v ss v ddq dq d dq d dqp d a a ce 1 ce 2 bw d bw c bw b bw a ce 3 v dd v ss clk we cen oe a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 a a adv/ld zz mode a cy7c1471bv25 byte a byte b byte d byte c a a figure 1. 100-pin tqfp pinout [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 6 of 33 pin configurations (continued) a a a a a1 a0 nc/288m nc/144m v ss v dd a a a a a a a nc nc v ddq v ss nc dqp a dq a dq a v ss v ddq dq a dq a v ss nc v dd dq a dq a v ddq v ss dq a dq a nc nc v ss v ddq nc nc nc nc nc nc v ddq v ss nc nc dq b dq b v ss v ddq dq b dq b nc v dd nc v ss dq b dq b v ddq v ss dq b dq b dqp b nc v ss v ddq nc nc nc a a ce 1 ce 2 nc nc bw b bw a ce 3 v dd v ss clk we cen oe a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 a a adv/ld zz mode a cy7c1473bv25 byte a byte b a a figure 2. 100-pin tqfp pinout [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 7 of 33 pin configurations (continued) 165-ball fbga (15 17 1.4 mm) pinout cy7c1471bv25 (2 m 36) 234 567 1 a b c d e f g h j k l m n p r tdo nc/576m nc/1g dqp c dq c dqp d nc dq d ce 1 bw b ce 3 bw c cen a ce2 dq c dq d dq d mode nc dq c dq c dq d dq d dq d a v ddq bw d bw a clk we v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck v ss tdi a a dq c v ss dq c v ss dq c dq c nc v ss v ss v ss v ss nc v ss a1 dq d dq d nc/144m nc v ddq v ss tms 891011 nc/288m a a adv/ld nc oe a nc v ss v ddq nc dqp b v ddq v dd dq b dq b dq b nc dq b nc dq a dq a v dd v ddq v dd v ddq dq b v dd nc v dd dq a v dd v ddq dq a v ddq v dd v dd v ddq v dd v ddq dq a v ddq a a v ss a a a dq b dq b dq b zz dq a dq a dqp a dq a a v ddq a a0 a v ss nc cy7c1473bv25 (4 m 18) 234 567 1 a b c d e f g h j k l m n p r tdo nc/576m nc/1g nc nc dqp b nc dq b ce 1 nc ce 3 bw b cen a ce2 nc dq b dq b mode nc dq b dq b nc nc nc a v ddq nc bw a clk we v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck v ss tdi a a dq b v ss nc v ss dq b nc nc v ss v ss v ss v ss nc v ss a1 dq b nc nc/144m nc v ddq v ss tms 891011 nc/288m a a adv/ld a oe a nc v ss v ddq nc dqp a v ddq v dd nc dq a dq a nc nc nc dq a nc v dd v ddq v dd v ddq dq a v dd nc v dd nc v dd v ddq dq a v ddq v dd v dd v ddq v dd v ddq nc v ddq a a v ss a a a dq a nc nc zz dq a nc nc dq a a v ddq a a0 a v ss nc a a a a [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 8 of 33 pin configurations (continued) a b c d e f g h j k l m n p r t u v w 1 2 34 5 6 78 9 11 10 dqg dqg dqg dqg dqg dqg dqg dqg dqc dqc dqc dqc nc dqpg dqh dqh dqh dqh dqd dqd dqd dqd dqpd dqpc dqc dqc dqc dqc nc dqh dqh dqh dqh dqph dqd dqd dqd dqd dqb dqb dqb dqb dqb dqb dqb dqb dqf dqf dqf dqf nc dqpf dqa dqa dqa dqa dqe dqe dqe dqe dqpa dqpb dqf dqf dqf dqf nc dqa dqa dqa dqa dqpe dqe dqe dqe dqe aa a a nc nc nc/144m a a nc/288m a aa aa a a1 a0 a aa aa a nc/576m nc nc nc nc nc bws b bws f bws e bws a bws c bws g bws d bws h tms tdi tdo tck nc nc mode nc cen v ss nc clk nc v ss v dd v dd v dd v dd v dd v dd v dd v dd v dd v dd v dd v dd v dd v ss v ss v ss v ss v ss v ss v ss v ss nc/1g v dd nc oe ce 3 ce 1 ce 2 adv/ld we v ss v ss v ss v ss v ss v ss v ss zz v ss v ss v ss v ss nc v ddq v ss v ss nc v ss v ss v ss v ss v ss v ss nc v ss v ddq v ddq v ddq v ddq v ddq nc v ddq v ddq v ddq v ddq nc v ddq v ddq v ddq v ddq nc v ddq v ddq v ddq v ddq v ddq v ddq v ddq v ddq v ddq v ddq CY7C1475BV25 (1 m 72) 209-ball fbga (14 22 1.76 mm) pinout [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 9 of 33 pin definitions name io description a 0 , a 1 , a input- synchronous address inputs used to select one of the address locations . sampled at the rising edge of the clk. a [1:0] are fed to the two-bit burst counter. bw a , bw b , bw c , bw d , bw e , bw f , bw g , bw h input- synchronous byte write inputs, active low . qualified with we to conduct writes to the sram. sampled on the rising edge of clk. we input- synchronous write enable input, active low . sampled on the rising edge of clk if cen is active low. this signal must be asserted low to initiate a write sequence. adv/ld input- synchronous advance/load input . used to advance the on-chip addres s counter or load a new address. when high (and cen is asserted low) the internal burst counter is advanced. when low, a new address can be loaded into the device fo r an access. after being deselected, adv/ld must be driven low to load a new address. clk input- clock clock input . captures all synchronous inputs to the device. clk is qualified with cen . clk is only recognized if cen is active low. ce 1 input- synchronous chip enable 1 input, active low . sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select or deselect the device. ce 2 input- synchronous chip enable 2 input, active high . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select or deselect the device. ce 3 input- synchronous chip enable 3 input, active low . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select or dese lect the device. oe input- asynchronous output enable, asynchronous input, active low . combined with the synchronous logic block inside the device to control the direction of the io pins. when low, the io pins are enabled to behave as outputs. when deasserted high, io pi ns are tri-stated, and act as input data pins. oe is masked during the data portion of a writ e sequence, during the first clock when emerging from a deselected state, when the device has been deselected. cen input- synchronous clock enable input, active low . when asserted low the clock signal is recognized by the sram. when deasserted high the clock signal is masked. because deasserting cen does not deselect the device, cen can be used to extend the previous cycle when required. zz input- asynchronous zz ?sleep? input . this active high input places the device in a non-time-critical ?sleep? condition with data integrity preserved. for normal operation, this pin must be low or left floating. zz pin has an internal pull down. dq s io- synchronous bidirectional data io lines . as inputs, they feed into an on-c hip data register that is triggered by the rising edge of clk. as outputs, they de liver the data contained in the memory location specified by the addresses pres ented during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outputs. when high, dq s and dqp x are placed in a tri-state cond ition.the outputs are automatically tri-stated during the data portion of a write sequ ence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of oe . dqp x io- synchronous bidirectional data parity io lines. functionally, these signals are identical to dq s . during write sequences, dqp x is controlled by bw x correspondingly. mode input strap pin mode input. selects the bu rst order of the device. when tied to gnd selects linear burst sequence. when tied to v dd or left floating selects inter- leaved burst sequence. v dd power supply power supply inputs to the core of the device . v ddq io power supply power supply for the io circuitry . v ss ground ground for the device . tdo jtag serial output synchronous serial data out to the jtag circuit . delivers data on the negative edge of tck. if the jtag feature is not used, this pin must be left unconnected. this pin is not available on tqfp packages. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 10 of 33 functional overview the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 are synchronous flow through burst srams designed specifically to eliminate wait st ates during write read transitions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock signal is qualified with the clock enable input signal (cen ). if cen is high, the clock signal is not recognized and all internal states are maintained. all synchronous operations are qualified with cen . maximum access delay from the clock rise (t cdv ) is 6.5 ns (133-mhz device). accesses are initiated by asserting all three chip enables (ce 1 , ce 2 , ce 3 ) active at the rising edge of the clock. if cen is active low and adv/ld is asserted low, the address presented to the device is latched. the access is either a read or write operation, depending on the stat us of the write enable (we ). use byte write select (bw x ) to conduct byte write operations. write operations ar e qualified by the we . all writes are simplified with on-chip synchronous self- timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) simplify depth expansion. all operations (reads, writes, and de selects) are pipelined. adv/ld must be driven low after the dev ice is deselected to load a new address for the next operation. single read accesses a read access is initiated when the following conditions are satisfied at clock rise: cen is asserted low ce 1 , ce 2 , and ce 3 are all asserted active we is deasserted high adv/ld is asserted low. the address presented to the address inputs is latched into the address register and presented to the memory array and control logic. the control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers. the data is av ailable within 6.5 ns (133-mhz device) provided oe is active low. after the first clock of the read access, the output buffers are controlled by oe and the internal control logic. oe must be driven low to drive out the requested data. on the subseque nt clock, another operation (read/write/deselect) can be in itiated. when the sram is deselected at clock rise by one of the chip enable signals, the output is tri-stated immediately. burst read accesses the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 has an on-chip burst counter that enables the user the ability to supply a single address and conduct up to four reads without reasserting the address inputs. adv/ld must be driven low to load a new address into the sram, as described in the single read accesses section. the sequence of the burst counter is determined by the mode input signal. a low input on mode selects a linear burst mode, a high selects an interleaved burst sequence. both burst counters use a0 and a1 in the burst sequence, and wraps around when incremented sufficiently. a high input on adv/ld increments the internal burst counter regardless of the state of chip enable inputs or we . we is latched at the beginning of a burst cycle. therefore, the type of access (read or write) is maintained throughout the burst sequence. single write accesses write accesses are initiated when these conditions are satisfied at clock rise: cen is asserted low ce 1 , ce 2 , and ce 3 are all asserted active we is asserted low. the address presented to the address bus is loaded into the address register. the write signals are latched into the control logic block. the data lines are automatically tri-stated regardless of the state of the oe input signal. this allows the external logic to present the data on dqs and dqp x . on the next clock rise the data presented to dqs and dqp x (or a subset for byte write operations, see truth table for read/write on page 13 for details) inputs is latched into the device and the write is complete. additional accesses (read/write/desel ect) can be initiated on this cycle. the data written during the writ e operation is controlled by bw x signals. the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 provide byte write capability that is described in the truth table for read/write on page 13 . the input we with the selected bw x input selectively writes to only the desired bytes. bytes not selected durin g a byte write operation remain unaltered. a synchronous self timed write mechanism is tdi jtag serial input synchronous serial data in to the jtag circuit . sampled on the rising edge of tck. if the jtag feature is not used, leave this pin floating or connected to v dd through a pull up resistor. this pin is not available on tqfp packages. tms jtag serial input synchronous serial data in to the jtag circuit . sampled on the rising edge of tck. if the jtag feature is not used, this pin can be disc onnected or connected to v dd . this pin is not available on tqfp packages. tck jtag-clock clock input to the jtag circuitry . if the jtag feature is not used, connect this pin to v ss . this pin is not available on tqfp packages. nc - no connects . not internally connected to the die. 144m, 288m, 576m, and 1g are address expansion pins and are not internally connected to the die. pin definitions (continued) name io description [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 11 of 33 provided to simplify the write ope rations. byte write capability is included to greatly simplify r ead/modify/write sequences, which can be reduced to simple byte write operations. because the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 are common io devices, data must not be driven into the device while the outputs are active. the oe can be deasserted high before pr esenting data to the dqs and dqp x inputs. this tri-states th e output drivers. as a safety precaution, dqs and dqp x are automatically tri-stated during the data portion of a write cycle, regardless of the state of oe . burst write accesses the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 have an on-chip burst counter that makes it possible to supply a single address and conduct up to four write operations without reasserting the address inputs. drive adv/ld low to load the initial address, as described in the single write accesses section. when adv/ld is driven high on the subsequent clock rise, the chip enables (ce 1 , ce 2 , and ce 3 ) and we inputs are ignored and the burst counter is incremented. you must drive the correct bw x inputs in each cycle of the burst write to write the correct data bytes. sleep mode the zz input pin is an asynchronous input. asserting zz places the sram in a power conservation ?sleep? mode. two clock cycles are required to enter into or exit from this ?sleep? mode. while in this mode, data integrity is guaranteed. accesses pending when entering the ?sleep? mode are not considered valid nor is the completion of the operation guaranteed. you must select the device before entering the ?sleep? mode. ce 1 , ce 2 , and ce 3 , must remain inactive for the duration of t zzrec after the zz input returns low. interleaved burst address table (mode = floating or v dd ) first address a1: a0 second address a1: a0 third address a1: a0 fourth address a1: a0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst address table (mode = gnd) first address a1: a0 second address a1: a0 third address a1: a0 fourth address a1: a0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 zz mode electrical characteristics parameter description test conditions min max unit i ddzz sleep mode standby current zz > v dd ? ? 0.2 v ? 120 ma t zzs device operation to zz zz > v dd ? 0.2 v ? 2t cyc ns t zzrec zz recovery time zz < 0.2 v 2t cyc ?ns t zzi zz active to sleep current th is parameter is sampled ? 2t cyc ns t rzzi zz inactive to exit sleep current this parameter is sampled 0 ? ns [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 12 of 33 truth table the truth table for cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 follows. [1, 2, 3, 4, 5, 6, 7] operation address used ce 1 ce 2 ce 3 zz adv/ld we bw x oe cen clk dq deselect cycle none h x x l l x x x l l->h tri-state deselect cycle none x x h l l x x x l l->h tri-state deselect cycle none x l x l l x x x l l->h tri-state continue deselect cycle none x x x l h x x x l l->h tri-state read cycle (begin burst) exte rnal l h l l l h x l l l->h data out (q) read cycle (continue burst) next x x x l h x x l l l->h data out (q) nop/dummy read (begin burst) external l h l l l h x h l l->h tri-state dummy read (continue burst) next x x x l h x x h l l->h tri-state write cycle (begin burst) external l h l l l l l x l l->h data in (d) write cycle (continue burst) next x x x l h x l x l l->h data in (d) nop/write abort (begin burst) none l h l l l l h x l l->h tri-state write abort (continue burst) next x x x l h x h x l l->h tri-state ignore clock edge (stall) current x x x l x x x x h l->h - sleep mode none x x x h x x x x x x tri-state notes 1. x = ?don't care.? h = logic high, l = logic low. bw x = l signifies at least one byte write select is active, bw x = valid signifies that the desired byte write selects are asserted, see truth table for read/write on page 13 for details. 2. write is defined by bw x , and we . see truth table for read/write on page 13 . 3. when a write cycle is detected, all io s are tri-stated, even during byte writes. 4. the dqs and dqp x pins are controlled by the current cycle and the oe signal. oe is asynchronous and is not sampled with the clock. 5. cen = h, inserts wait states. 6. device powers up deselected with the ios in a tri-state condition, regardless of oe . 7. oe is asynchronous and is not sampled with the clock rise. it is ma sked internally during write cycles. during a read cycle dqs a nd dqp x = tri-state when oe is inactive or when the device is deselected, and dqs and dqp x = data when oe is active. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 13 of 33 truth table for read/write the read-write truth table for cy7c1471bv25 follows. [8, 9, 10] function we bw a bw b bw c bw d read h x x x x write no bytes written l h h h h write byte a ? (dq a and dqp a )llhhh write byte b ? (dq b and dqp b )lhlhh write byte c ? (dq c and dqp c )lhhlh write byte d ? (dq d and dqp d ) lhhhl write all bytes l l l l l truth table for read/write the read-write truth table for cy7c1473bv25 follows. [8, 9, 10] function we bw b bw a read h x x write ? no bytes written l h h write byte a ? (dq a and dqp a )lhl write byte b ? (dq b and dqp b )llh write both bytes l l l notes 8. x = ?don't care.? h = logic high, l = logic low. bw x = l signifies at least one byte write select is active, bw x = valid signifies that the desired byte write selects are asserted, see truth table for read/write on page 13 for details. 9. write is defined by bw x , and we . see truth table for read/write on page 13 . 10. this table is only a partial listing of the byte write combinations. any combination of bw x is valid. appropriate write is bas ed on which byte write is active. truth table for read/write the read-write truth table for CY7C1475BV25 follows. [8, 9, 10] function we bw x read h x write ? no bytes written l h write byte x ??? (dq x and dqp x) ll write all bytes l all bw = l [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 14 of 33 ieee 1149.1 serial boundary scan (jtag) the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 incorporate a serial boundary scan test access port (tap). this port operates in accordance with ieee standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. these functions from the ieee specification are excluded because their inclusion places an added delay in the critical speed path of the sram . note that the tap controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant taps. the tap operates using jedec-standard 2.5 v io logic levels. the cy7c1471bv25, cy7c1473bv25, and CY7C1475BV25 contain a tap controller, instruction register, boundary scan register, bypass register, and id register. disabling the jtag feature it is possible to operate the sram without using the jtag feature. to disable the tap controller, tie tck low (v ss ) to prevent clocking of the device. tdi and tms are internally pulled up and may be unconnected. they may alternately be connected to v dd through a pull up resistor. tdo must be left unconnected. during power up, the device comes up in a reset state, which does not interfere with the operation of the device. the 0/1 next to each state represents the value of tms at the rising edge of tck. test access port (tap) test clock (tck) the test clock is used only with the tap controller. all inputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select (tms) the tms input gives commands to the tap controller and is sampled on the rising edge of tck. you can leave this ball unconnected if the tap is not used. the ball is pulled up internally, resulting in a logic high level. test data in (tdi) the tdi ball serially inputs information into the registers and is connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruction that is loaded into the tap instruction register. for information about loading the instruction register, see the tap controller state diagram . tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is connected to the most significant bit (msb) of any register. (see tap controller block diagram .) test data out (tdo) the tdo output ball serially clo cks data out from the registers. the output is active depending upon the current state of the tap state machine. the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. (see tap controller state diagram .) performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and may be performed while the sram is operating. during power up, the tap is reset internally to ensure that tdo comes up in a high z state. tap controller state diagram test-logic reset run-test/ idle select dr-scan select ir-scan capture-dr shift-dr capture-ir shift-ir exit1-dr pause-dr exit1-ir pause-ir exit2-dr update-dr exit2-ir update-ir 1 1 1 0 1 1 0 0 1 1 1 0 0 0 0 0 0 0 0 0 1 0 1 1 0 1 0 1 1 1 1 0 tap controller block diagra bypass register 0 instruction register 0 1 2 identication register 0 1 2 29 30 31 . . . boundary scan register 0 1 2 . . x . . . selection circuitry tck tms tap controller tdi tdo selection circuitry [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 15 of 33 tap registers registers are connected betwe en the tdi and tdo balls and enable the scanning of data into and out of the sram test circuitry. only one register is selectable at a time through the instruction register. data is serially loaded into the tdi ball on the rising edge of tck. data is output on the tdo ball on the falling edge of tck. instruction register three-bit instructions can be seri ally loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo balls as shown in the tap controller block diagram on page 14 . during power up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is pl aced in a reset state as described in the previous section. when the tap controller is in t he capture-ir state, the two least significant bits are loaded with a binary ?01? pattern to enable fault isolation of the board-level serial test data path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. the bypass register is a single-bit register that can be placed between the tdi and tdo balls. this shifts the data through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all the input and bidirectional balls on the sram. the boundary scan register is lo aded with the contents of the ram io ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo balls when the controller is moved to the shift-dr state. the extest, sample/preload and sample z in structions can be used to capture the contents of the io ring. the boundary scan order tables show the order in which the bits are connected. each bit corresponds to one of the bumps on the sram package. the msb of the re gister is connected to tdi and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor specific, 32-bit code during the capture dr state when the idcode command is loaded in the instruction register . the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift dr state. the id regist er has a vendor code and other information described in identification register definitions on page 18 . tap instruction set overview eight different instructions are possible with the three-bit instruction register. all co mbinations are listed in identification codes on page 18 . three of these instructions are listed as reserved and are not for use. the other five instructions are described in this section in detail. the tap controller used in this sram is not fully compliant to the 1149.1 convention because so me of the mandatory 1149.1 instructions are not fully implemented. you cannot use the tap controller to load address data or control signals into the sram and you cannot preload the io buffers. the sram does not implement the 1149.1 commands extest or intest or the preload portion of sample/preload; rather, it performs a capture of the io ring when these instruc- tions are executed. instructions are loaded into the tap controller during the shift-ir state when the instruction register is placed between tdi and tdo. during this state, instructions are shifted through the instruction register through the tdi and tdo balls. to execute the instruction after it is shift ed in, the tap controller must be moved into the update-ir state. extest extest is a mandatory 1149.1 instruction which is executed whenever the instruction register is loaded with all 0s. extest is not implemented in this sram tap controller making this device not compliant with 1149.1. the tap controller does recognize an all-0 instruction. when an extest instruction is loaded into the instruction register, the sram responds as if a sample/preload instruction is loaded. there is one difference between the two instructions. unlike the sam ple/preload instruction, extest places the sram outputs in a high z state. idcode the idcode instruction causes a vendor specific, 32-bit code to load into the instruction register. it also places the instruction register between the tdi and tdo balls and enables the idcode for shifting out of t he device when the tap controller enters the shift-dr state. the idcode instruction is load ed into the instruction register during power up or whenever the tap controller is in a test logic reset state. sample z the sample z instruction connects the boundary scan register between the tdi and tdo pins when the tap controller is in a shift-dr state. it also places all sram outputs into a high z state. sample/preload sample/preload is a 1149.1 m andatory instruction. the preload portion of this instruction is not implemented, so the device tap controller is not fully 1149.1 compliant. when the sample/preload instruction is loaded into the instruction register and the tap controller is in the capture-dr state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. be aware that the tap controll er clock only operates at a frequency up to 20 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that, during the capture-dr state, an input or output may undergo a transition. the tap may then try to capture a signal while in transition (metastable state). this does not harm the device, but there is [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 16 of 33 no guarantee as to the value that is captured. repeatable results may not be possible. to guarantee that the boundary scan register captures the correct signal value, make certain that the sram signal is stabilized long enough to meet the tap controller?s capture setup plus hold time (t cs plus t ch ). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sample/preload instruction. if th is is an issue, it is still possible to capture all other signals and simply ignore the value of the clk captured in the boundary scan register. after the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the boundary scan register between the tdi and tdo balls. note that since the preload part of the command is not imple- mented, putting the tap to the update-dr state while performing a sample/preload instruction has the same effect as the pause-dr command. bypass when the bypass instruction is loaded in the instruction register and the tap is placed in a shift- dr state, the bypass register is placed between the tdi and tdo balls. the advantage of the bypass instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. reserved these instructions are not im plemented but are reserved for future use. do not use these instructions. figure 3. tap timing t tl test clock (tck) 123456 t est mode select (tms) t th test data-out (tdo) t cyc test data-in (tdi) t tmsh t tmss t tdih t tdis t tdox t tdov dont care undefined [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 17 of 33 2.5 v tap ac test conditions input pulse levels................................................v ss to 2.5 v input rise and fall time .....................................................1 ns input timing reference levels...... .................................. 1.25 v output reference levels ............................................... 1.25 v test load termination supply voltage ........................... 1.25 v tap ac switchi ng characteristics over the operating range [11, 12] parameter description min max unit clock t tcyc tck clock cycle time 50 ? ns t tf tck clock frequency ? 20 mhz t th tck clock high time 20 ? ns t tl tck clock low time 20 ? ns output times t tdov tck clock low to tdo valid ? 10 ns t tdox tck clock low to tdo invalid 0 ? ns setup times t tmss tms setup to tck clock rise 5 ? ns t tdis tdi setup to tck clock rise 5 ? ns t cs capture setup to tck rise 5 ? ns hold times t tmsh tms hold after tck clock rise 5 ? ns t tdih tdi hold after clock rise 5 ? ns t ch capture hold after clock rise 5 ? ns 2.5 v tap ac output load equivalent tdo 1.25v 20pf z = 50 o 50 (0 c < t a < +70 c; v dd = 2.375 to 2.625 unless otherwise noted) [13] parameter description test conditions min max unit v oh1 output high voltage i oh = ?1.0 ma, v ddq = 2.5 v 2.0 ? v v oh2 output high voltage i oh = ?100 a, v ddq = 2.5 v 2.1?v v ol1 output low voltage i ol = 1.0 ma, v ddq = 2.5 v ? 0.4 v v ol2 output low voltage i ol = 100 a, v ddq = 2.5 v ? 0.2 v v ih input high voltage v ddq = 2.5 v 1.7 v dd + 0.3 v v il input low voltage v ddq = 2.5 v ?0.3 0.7 v i x input load current gnd < v in < v ddq ?5 5 a notes 11. t cs and t ch refer to the setup and hold time requirements of latching data from the boundary scan register. 12. test conditions are specified using the load in tap ac test conditions. t r /t f = 1 ns. 13. all voltages refer to v ss (gnd). [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 18 of 33 identification regi ster definitions instruction field cy7c1471bv25 (2 m 36) cy7c1473bv25 (4 m 18) CY7C1475BV25 (1 m 72) description revision number (31:29) 000 000 000 describes the version number device depth (28:24) 01011 01011 01011 reserved for internal use architecture/memory type (23:18) 001001 001001 00 1001 defines memory type and architecture bus width/density (17:12) 100100 010100 110100 defines width and density cypress jedec id code (11:1) 00000110100 00000110100 0 0000110100 allows unique identification of sram vendor id register presence indicator (0) 1 1 1 i ndicates the presence of an id register scan register sizes register name bit size ( 36) bit size ( 18) bit size ( 72) instruction 3 3 3 bypass 1 1 1 id 32 32 32 boundary scan order ? 165-ball fbga 71 52 ? boundary scan order ? 209-ball bga ? ? 110 identification codes instruction code description extest 000 captures io ring contents. places the boundary scan register between tdi and tdo. forces all sram outputs to high z state. this instruction is not 1149.1 compliant. idcode 001 loads the id register with the vendor id code and places the register between tdi and tdo. this operation does not affect sram operations. sample z 010 captures io ring contents. places th e boundary scan register between tdi and tdo. forces all sram output drivers to a high z state. reserved 011 do not use: this instru ction is reserved for future use. sample/preload 100 captures io ring contents. places the boundary scan register between tdi and tdo. does not affect sram operation. this in struction does not impl ement 1149.1 preload function and is therefore not 1149.1 compliant. reserved 101 do not use: this instru ction is reserved for future use. reserved 110 do not use: this instru ction is reserved for future use. bypass 111 places the bypass register between tdi and tdo. this operation does not affect sram operation. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 19 of 33 boundary scan exit order (2 m 36) bit # 165-ball id bit # 165-ball id bit # 165-ball id bit # 165-ball id 1c121r341j1161b7 2 d1 22 p2 42 k10 62 b6 3 e1 23 r4 43 j10 63 a6 4d2 24p6 44h11 64b5 5e2 25r6 45g11 65a5 6f1 26r8 46f11 66a4 7g1 27p3 47e11 67b4 8 f2 28 p4 48 d10 68 b3 9g2 29p8 49d11 69a3 10 j1 30 p9 50 c11 70 a2 11 k1 31 p10 51 g10 71 b2 12 l1 32 r9 52 f10 13 j2 33 r10 53 e10 14 m1 34 r11 54 a9 15 n1 35 n11 55 b9 16 k2 36 m11 56 a10 17 l2 37 l11 57 b10 18 m2 38 m10 58 a8 19 r1 39 l10 59 b8 20 r2 40 k11 60 a7 boundary scan exit order (4 m 18) bit # 165-ball id bit # 165-ball id bit # 165-ball id bit # 165-ball id 1d214r427l1040b10 2e215p628k1041a8 3 f2 16 r6 29 j10 42 b8 4g2 17r8 30h11 43a7 5j1 18p3 31g11 44b7 6k119p432f1145b6 7l1 20p8 33e11 46a6 8m1 21p9 34d11 47b5 9 n1 22 p10 35 c11 48 a4 10 r1 23 r9 36 a11 49 b3 11 r2 24 r10 37 a9 50 a3 12 r3 25 r11 38 b9 51 a2 13 p2 26 m10 39 a10 52 b2 [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 20 of 33 boundary scan exit order (1 m 72) bit # 209-ball id bit # 209-ball id bit # 209-ball id bit # 209-ball id 1 a1 29 t1 57 u10 85 b11 2a2 30t2 58t11 86b10 3b1 31u1 59t10 87a11 4b2 32u2 60r11 88a10 5 c1 33 v1 61 r10 89 a7 6c2 34v2 62p11 90a5 7 d1 35 w1 63 p10 91 a9 8d2 36w2 64n11 92u8 9 e1 37 t6 65 n10 93 a6 10 e2 38 v3 66 m11 94 d6 11 f1 39 v4 67 m10 95 k6 12 f2 40 u4 68 l11 96 b6 13 g1 41 w5 69 l10 97 k3 14 g2 42 v6 70 p6 98 a8 15 h1 43 w6 71 j11 99 b4 16 h2 44 v5 72 j10 100 b3 17 j1 45 u5 73 h11 101 c3 18 j2 46 u6 74 h10 102 c4 19 l1 47 w7 75 g11 103 c8 20 l2 48 v7 76 g10 104 c9 21 m1 49 u7 77 f11 105 b9 22 m2 50 v8 78 f10 106 b8 23 n1 51 v9 79 e10 107 a4 24 n2 52 w11 80 e11 108 c6 25 p1 53 w10 81 d11 109 b7 26 p2 54 v11 82 d10 110 a3 27 r2 55 v10 83 c11 28 r1 56 u11 84 c10 [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 21 of 33 maximum ratings exceeding maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature .... ............ ............... ?65 ? c to +150 ? c ambient temperature with power applied .......................................... ?55 ?? c to +125 ? c supply voltage on v dd relative to gnd ......?0.5 v to +3.6 v supply voltage on v ddq relative to gnd ..... ?0.5 v to +v dd dc voltage applied to outputs in tri-state .........................................?0.5 v to v ddq + 0.5 v dc input voltage ................................. ?0.5 v to v dd + 0.5 v current into outputs (low)..... .................................... 20 ma static discharge voltage......................................... > 2001 v (mil-std-883, method 3015) latch up current ................................................... > 200 ma operating range range ambient temperature v dd v ddq commercial 0 c to +70 c 2.5 v ? 5% / + 5% 2.5 v ? 5% to v dd industrial ?40 c to +85 c electrical characteristics over the operating range [14, 15] parameter description test conditions min max unit v dd power supply voltage 2.375 2.625 v v ddq io supply voltage for 2.5 v io 2.375 v dd v v oh output high voltage for 2.5 v io, i oh = ? ?1.0 ma 2.0 ? v v ol output low voltage for 2.5 v io, i ol = ? 1.0 ma ? 0.4 v v ih input high voltage [14] for 2.5 v io 1.7 v dd + 0.3 v v v il input low voltage [14] for 2.5 v io ?0.3 0.7 v i x input leakage current except zz and mode gnd ? v i ? v ddq ?5 5 ? a input current of mode input = v ss ?30 ? ? a input = v dd ?5 ? a input current of zz input = v ss ?5 ? ? a input = v dd ?30 ? a i oz output leakage current gnd ? v i ? v ddq, output disabled ?5 5 ? a i dd [16] v dd operating supply current v dd = max, i out = 0 ma, f = f max = 1/t cyc 6.5 ns cycle, 133 mhz ? 305 ma 8.5 ns cycle, 100 mhz ? 275 ma i sb1 automatic ce power down current?ttl inputs v dd = max, device deselected, v in ? v ih or v in ? v il , f = f max , inputs switching 6.5 ns cycle, 133 mhz ? 170 ma 8.5 ns cycle, 100 mhz ?170 ma i sb2 automatic ce power down current?cmos inputs v dd = max, device deselected, v in ? 0.3 v or v in > v dd ? 0.3 v, f = 0, inputs static all speeds ? 120 ma i sb3 automatic ce power down current?cmos inputs v dd = max, device deselected, or v in ? 0.3 v or v in > v ddq ? 0.3 v f = f max , inputs switching 6.5 ns cycle, 133 mhz ? 170 ma 8.5 ns cycle, 100 mhz ?170 ma i sb4 automatic ce power down current?ttl inputs v dd = max, device deselected, v in ? v dd ? 0.3 v or v in ? 0.3 v, f = 0, inputs static all speeds ? 135 ma notes 14. overshoot: v ih (ac) < v dd + 1.5 v (pulse width less than t cyc /2). undershoot: v il (ac) > ?2 v (pulse width less than t cyc /2). 15. t power-up : assumes a linear ramp from 0 v to v dd (min.) within 200 ms. during this time v ih < v dd and v ddq < v dd . 16. the operation current is calculated with 50% read cycle and 50% write cycle. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 22 of 33 capacitance tested initially and after any design or proc ess change that may affect these parameters. parameter description test conditions 100-pin tqfp max 165-ball fbga max 209-ball fbga max unit c address address input capacitance t a = 25 ? c, f = 1 mhz, v dd = 2.5 v, v ddq = 2.5 v 6 6 6 pf c data data input capacitance 5 5 5 pf c ctrl control input capacitance 8 8 8 pf c clk clock input capacitance 6 6 6 pf c io input-output capacitance 5 5 5 pf thermal resistance tested initially and after any design or proc ess change that may affect these parameters. parameter description test conditions 100-pin tqfp package 165-ball fbga package 209-ball fbga package unit ? ja thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, according to eia/jesd51. 24.63 16.3 15.2 ? c/w ? jc thermal resistance (junction to case) 2.28 2.1 1.7 ? c/w figure 4. ac test loads and waveforms output r = 1667 ? r = 1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v l = 1.25 v 2.5 v all input pulses v ddq gnd 90% 10% 90% 10% ? 1 ns ? 1 ns (c) 2.5 v io test load [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 23 of 33 switching characteristics over the operating range [17, 18] parameter description 133 mhz 100 mhz unit min max min max t power [19] 1? 1?ms clock t cyc clock cycle time 7.5 ? 10 ? ns t ch clock high 2.5 ? 3.0 ? ns t c]l clock low 2.5 ? 3.0 ? ns output times t cdv data output valid after clk rise ? 6.5 ? 8.5 ns t doh data output hold after clk rise 2.5 ? 2.5 ? ns t clz clock to low z [20, 21, 22] 3.0 ? 3.0 ? ns t chz clock to high z [20, 21, 22] ? 3.8 ? 4.5 ns t oev oe low to output valid ? 3.0 ? 3.8 ns t oelz oe low to output low z [20, 21, 22] 0? 0?ns t oehz oe high to output high z [20, 21, 22] ? 3.0 ? 4.0 ns setup times t as address setup before clk rise 1.5 ? 1.5 ? ns t als adv/ld setup before clk rise 1.5 ? 1.5 ? ns t wes we , bw x setup before clk rise 1.5 ? 1.5 ? ns t cens cen setup before clk rise 1.5 ? 1.5 ? ns t ds data input setup befo re clk rise 1.5 ? 1.5 ? ns t ces chip enable setup before clk rise 1.5 ? 1.5 ? ns hold times t ah address hold after clk rise 0.5 ? 0.5 ? ns t alh adv/ld hold after clk rise 0.5 ? 0.5 ? ns t weh we , bw x hold after clk rise 0.5 ? 0.5 ? ns t cenh cen hold after clk rise 0.5 ? 0.5 ? ns t dh data input hold after clk rise 0.5 ? 0.5 ? ns t ceh chip enable hold after clk rise 0.5 ? 0.5 ? ns notes 17. timing reference level is 1.25 v when v ddq = 2.5 v. 18. test conditions shown in (a) of figure 4 on page 22 unless otherwise noted. 19. this part has a voltage regulator internally; t power is the time that the power is supplied above v dd (minimum) initially, before a read or write operation can be initiated. 20. t chz , t clz ,t oelz , and t oehz are specified with ac test conditions shown in part (b) of figure 4 on page 22 . transition is measured 200 mv from steady-state voltage. 21. at any supplied voltage and temperature, t oehz is less than t oelz and t chz is less than t clz to eliminate bus contention between srams when sharing the same data bus. these specifications do not imply a bu s contention condition, but reflect paramet ers guaranteed over worst case user condi tions. device is designed to achieve high z before low z under the same system conditions. 22. this parameter is sampled and not 100% tested. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 24 of 33 switching waveforms figure 5 shows read-write timing waveform. [23, 24, 25] figure 5. read/write timing write d(a1) 123 456789 clk t cyc t cl t ch 10 ce t ceh t ces we cen t cenh t cens bw x adv/ld t ah t as address a1 a2 a3 a4 a5 a6 a7 t dh t ds dq c ommand t clz d(a1) d(a2) q(a4) q(a3) d(a2+1) t doh t chz t cdv write d(a2) burst write d(a2+1) read q(a3) read q(a4) burst read q(a4+1) write d(a5) read q(a6) write d(a7) deselect oe t oev t oelz t oehz dont care undefined d(a5) t doh q(a4+1) d(a7) q(a6) notes 23. for this waveform zz is tied low. 24. when ce is low, ce 1 is low, ce 2 is high, and ce 3 is low. when ce is high, ce 1 is high, ce 2 is low or ce 3 is high. 25. order of the burst sequence is determin ed by the status of the mode (0 = linear, 1 = interleaved). burst operations are opti onal. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 25 of 33 figure 6 shows nop, stall and deselect cycles waveform. [26, 27, 28] figure 6. nop, stall and deselect cycles switching waveforms (continued) read q(a3) 456 78910 a3 a4 a5 d(a4) 123 clk ce we cen bw [a:d] adv/ld address dq c ommand write d(a4) stall write d(a1) read q(a2) stall nop read q(a5) deselect continue deselect dont care undefined t chz a1 a2 q(a2) d(a1) q(a3) t doh q(a5) notes 26. for this waveform zz is tied low. 27. when ce is low, ce 1 is low, ce 2 is high, and ce 3 is low. when ce is high, ce 1 is high, ce 2 is low or ce 3 is high. 28. the ignore clock edge or sta ll cycle (clock 3) illustrates cen being used to create a pause. a write is not performed during this cycle. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 26 of 33 figure 7 shows zz mode timing waveform. [29, 30] figure 7. zz mode timing switching waveforms (continued) t zz i supply clk zz t zzrec a ll inputs (except zz) dont care i ddzz t zzi t rzzi outputs (q) high-z deselect or read only notes 29. device must be deselected when entering zz mode. see truth table on page 12 for all possible signal conditions to deselect the device. 30. dqs are in high z when exiting zz sleep mode. [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 27 of 33 ordering information cypress offers other versions of this type of product in diff erent configurations and features. the following table contains on ly the list of parts that are currently available. for a complete listing of all optio ns, visit the cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products , or contact your loca l sales representative. cypress maintains a worldwide network of offices, solution cent ers, manufacturer's representati ves and distributors. to find th e office closest to you, visit us at http://www.cypress.com /go/datasheet/offices . speed (mhz) ordering code package diagram part and package type operating range 133 cy7c1471bv25-133axi 51- 85050 100-pin thin quad flat pack (14 20 1.4 mm) pb-free lndustrial ordering code definitions temperature range: i = industrial package type: ax = 100-pin tqfp (pb-free) frequency range: 133 mhz v25 = 2.5 v die revision 1471 = ft, 2 mb 36 (72 mb) marketing code: 7c = sram company id: cy = cypress i cy 1471 b - 133 ax 7c v25 [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 28 of 33 package diagrams figure 8. 100-pin tqfp (14 20 1.4 mm), 51-85050 51-85050 *d [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 29 of 33 figure 9. 165-ball fbga (15 17 1.4 mm), 51-85165 package diagrams (continued) 51-85165 *b [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 30 of 33 figure 10. 209-ball fbga (14 22 1.76 mm), 51-85167 package diagrams (continued) 51-85167 *a [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 31 of 33 acronyms document conventions units of measure acronym description bws byte write select bga ball grid array cmos complementary metal oxide semiconductor fbga fine-pitch ball grid array i/o input/output jtag joint test action group lsb least significant bit msb most significant bit oe output enable sram static random access memory tap test access port tck test clock tdi test data-in tdo test data-out tms test mode select tqfp thin quad flat pack ttl transistor transistor logic we write enable symbol unit of measure c degree celcius a micro amperes ma milli amperes mm milli meter ms milli seconds mhz mega hertz ns nano seconds ? ohms % percent pf pico farad vvolts wwatts [+] feedback
cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 document number: 001-15013 rev. *h page 32 of 33 document history page document title: cy7c1471bv25/cy7c1473bv 25/CY7C1475BV25, 72-mbit (2 m 36/4 m 18/1 m 72) flow-through sram with nobl? architecture document number: 001-15013 rev. ecn no. issue date orig. of change description of change ** 1024500 see ecn vkn/kkvtmp new data sheet *a 1274731 see ecn vkn/aesa corrected typo in the ?nop, stall and deselect cycles? waveform *b 1562503 see ecn vkn/aesa removed 1.8v io offering from the data sheet *c 1897447 see ecn vkn/aesa added footnote 14 related to idd *d 2082487 see ecn vkn converted from preliminary to final *e 2159486 see ecn vkn/pyrs minor change-moved to the external web *f 2898501 03/24/2010 njy removed inactive part num bers from ordering information table; updated package diagrams. *g 3207526 03/28/2011 njy updated ordering information and added ordering code definitions . updated package diagrams . updated in new template. *h 3256583 05/13/2011 njy added acronyms and units of measure . [+] feedback
document number: 001-15013 rev. *h revised may 13, 2011 page 33 of 33 nobl and no bus latency are trademarks of cypress semiconductor corporation. zbt is a trademark of integrated device technology , inc. all products and company names mentioned in this document may be the trademarks of their respective holders. cy7c1471bv25 cy7c1473bv25, CY7C1475BV25 ? cypress semiconductor corporation, 2007-2011. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement wi th cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives, and distributors. to find t he office closest to you, visit us at cypress locations . products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory optical & image sensing cypress.com/go/image psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 5 [+] feedback

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